Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by low frequency noise and pulsed electrical measurements. - S. Karboyan; Jean-Guy Tartarin; M. Rzin; Laurent Brunel; Arnaud Curutchet; Nathalie Malbert; Nathalie Labat; D. Carisetti; Benoit Lambert; M. Mermoux; E. Romain-Latu; F. Thomas; et al. (Microelectron. Reliab., 2013)

Gate defects analysis in AlGaN/GaN devices by mean of accurate extraction of the Schottky Barrier Height, electrical modelling, T-CAD simulations and TEM imaging. - Jean-Guy Tartarin; O. Lazar; D. Saugnon; Benoit Lambert; C. Moreau; C. Bouexière; E. Romain-Latu; K. Rousseau; A. David; J.-L. Roux (Microelectron. Reliab., 2017)