AC TDDB Analysis for HK/IL Gate Stack Breakdown and Frequency-dependent Oxygen Vacancy Trap Generation in Advanced nodes FinFET Devices by SILC Spectrum Methodology. - P. S. Chen; Y. W. Lee; D. S. Huang; S. C. Chen; C. F. Cheng; J. H. Lee; Jun He (IRPS, 2022)

Characterizing and Reducing the Layout Dependent Effect and Gate Resistance to Enable Multiple-Vt Scaling for a 3nm CMOS Technology. - C. A. Lu; H. P. Lee; H. C. Chen; Y. C. Lin; Y. H. Chung; S. H. Wang; J. Y. Yeh; V. S. Chang; M. C. Chiang; W. Chang; H. C. Chung; C. F. Cheng; et al. (VLSI Technology and Circuits, 2023)