Leakage current mechanism and effect of Y2O3 doped with Zr high-K gate dielectrics. - K. C. Lin; P. C. Juan; C. H. Liu; Mu-Chun Wang; C. H. Chou (Microelectron. Reliab., 2015)

Exploring AC Time-Dependent Dielectric Breakdown (TDDB) Through Frequency Noise Analysis. - Y. K. Chang; P. J. Liao; Y. C. Chang; C. H. Chou; Y. S. Liu; J. H. Lee; Ryan Lu; Y. K. Hwang (IRPS, 2025)