Physical analysis of hard and soft breakdown failures in ultrathin gate oxides. - M. K. Radhakrishnan; Kin Leong Pey; C. H. Tung; W. H. Lin (Microelectron. Reliab., 2002)

Correlation of failure mechanism of constant-current-stress and constant-voltage-stress breakdowns in ultrathin gate oxides of nMOSFETs by TEM. - Kin Leong Pey; C. H. Tung; M. K. Radhakrishnan; L. J. Tang; Y. Sun; X. D. Wang; W. H. Lin (Microelectron. Reliab., 2003)

Structure of the oxide damage under progressive breakdown. - Felix Palumbo; G. Condorelli; Salvatore Lombardo; Kin Leong Pey; C. H. Tung; L. J. Tang (Microelectron. Reliab., 2005)

Evidence that N2O is a stronger oxidizing agent than O2 for both Ta2O5 and bare Si below 1000degreeC and temperature for minimum low-K interfacial oxide for high-K dielectric on Si. - W. S. Lau; P. W. Qian; Taejoon Han; Nathan P. Sandler; S. T. Che; S. E. Ang; C. H. Tung; T. T. Sheng (Microelectron. Reliab., 2007)

Ultra High Power Cooling Solution for 3D-ICs. - C. J. Wu; S. T. Hsiao; J. Y. Wang; W. H. Lin; C. W. Chang; T. L. Shao; C. H. Tung; Doug C. H. Yu (VLSI Circuits, 2021)