State-Independent Low Resistance Drift SiSbTe Phase Change Memory for Analog In-Memory Computing Applications. - H. Y. Cheng; Z. L. Liu; A. Majumdar; Alexander Grun; A. Ray; J. Su; Malte J. Rasch; Fabio Carta; Lynne M. Gignac; C. Lavoie; C. W. Cheng; M. Bright Sky; et al. (VLSI Technology and Circuits, 2024)

First Demonstration of High Retention Energy Barriers and 2 ns Switching, Using Magnetic Ordered-Alloy-Based STT MRAM Devices. - M. G. Gottwald; Guohan Hu; Philip Louis Trouilloud; L. Rehm; C. Safranski; G. Kim; S. L. Brown; J. Bruley; C. P. D'Emic; O. Gunawan; H. Jung; C. Lavoie; et al. (VLSI Technology and Circuits, 2024)