Investigation of data pattern effects on nitride charge lateral migration in a charge trap flash memory by using a random telegraph signal method. - Y. H. Liu; H. Y. Lin; C. M. Jiang; Tahui Wang; W. J. Tsai; T. C. Lu; K. C. Chen; Chih-Yuan Lu (IRPS, 2018)

Correlation between SET-state current level and read-disturb failure time in a resistive switching memory. - P. C. Su; C. M. Jiang; C. W. Wang; Tahui Wang (IRPS, 2018)