A complete RF power technology assessment for military applications. - C. Moreau; P. Le Helleye; D. Ruelloux (Microelectron. Reliab., 2006)

Reliability of high voltage/high power L/S-band Hbt technology. - Benoit Lambert; G. Jonsson; J. Bataille; C. Ollivier; P. Mezenge; H. Derewonko; H. Thomas; D. Floriot; Hervé Blanck; C. Moreau (Microelectron. Reliab., 2010)

Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by low frequency noise and pulsed electrical measurements. - S. Karboyan; Jean-Guy Tartarin; M. Rzin; Laurent Brunel; Arnaud Curutchet; Nathalie Malbert; Nathalie Labat; D. Carisetti; Benoit Lambert; M. Mermoux; E. Romain-Latu; F. Thomas; et al. (Microelectron. Reliab., 2013)

Correlation between transient evolutions of the gate and drain currents in AlGaN/GaN technologies. - O. Lazar; Jean-Guy Tartarin; Benoit Lambert; C. Moreau; J.-L. Roux (Microelectron. Reliab., 2015)

Gate defects analysis in AlGaN/GaN devices by mean of accurate extraction of the Schottky Barrier Height, electrical modelling, T-CAD simulations and TEM imaging. - Jean-Guy Tartarin; O. Lazar; D. Saugnon; Benoit Lambert; C. Moreau; C. Bouexière; E. Romain-Latu; K. Rousseau; A. David; J.-L. Roux (Microelectron. Reliab., 2017)