Carrier injection efficiency for the reliability study of 3.5-1.2 nm thick gate-oxide CMOS technologies. - Alain Bravaix; C. Trapes; Didier Goguenheim; Nathalie Revil; E. Vincent (Microelectron. Reliab., 2003)

Experimental extraction of degradation parameters after constant voltage stress and substrate hot electron injection on ultrathin oxides. - C. Trapes; Didier Goguenheim; Alain Bravaix (Microelectron. Reliab., 2005)