Anomalous narrow width effect in p-channel metal-oxide-semiconductor surface channel transistors using shallow trench isolation technology. - W. S. Lau; K. S. See; C. W. Eng; W. K. Aw; Kang-Hyun Jo; K. C. Tee; James Y. M. Lee; Elgin K. B. Quek; H. S. Kim; Simon T. H. Chan; L. Chan (Microelectron. Reliab., 2008)

A study of the linearity between Ion and log Ioff of modern MOS transistors and its application to stress engineering. - W. S. Lau; Peizhen Yang; C. W. Eng; V. Ho; C. H. Loh; S. Y. Siah; D. Vigar; L. Chan (Microelectron. Reliab., 2008)

A Deeper Understanding of Well Charging Reliability with Circuit Relevant Test Structures. - T. L. Tan; C. W. Eng; H. Xu; J. M. Soon; E. Ebard; Mahesh Siddabathula; B. F. Phoong; K. H. Poh; M. Prabhu; X.-L. Zhao; J. M. Koo; K. Cho; et al. (IRPS, 2022)