A threshold-voltage model of SiGe-channel pMOSFET without Si cap layer. - X. Zou; Jing-Ping Xu; C. X. Li; Pui-To Lai; W. B. Chen (Microelectron. Reliab., 2007)

Effects of Ti content and wet-N2 anneal on Ge MOS capacitors with HfTiO gate dielectric. - C. X. Li; X. Zou; Pui-To Lai; Jing-Ping Xu; C. L. Chan (Microelectron. Reliab., 2008)