Continuous MOSFET performance increase with device scaling: The role of strain and channel material innovations. - Dimitri A. Antoniadis; Ingvar Åberg; Cáit Ní Chléirigh; Osama M. Nayfeh; Ali Khaki-Firooz; Judy L. Hoyt (IBM J. Res. Dev., 2006)

Strained SiGe-channel p-MOSFETs: impact of heterostructure design and process technology. - Cáit Ní Chléirigh (2007)