Novel High Voltage Bias Temperature Instabilities (HV-BTI) setup to monitor RON/VTH drift on GaN-on-Si E-mode MOSc-HEMTs under drain voltage. - Camille Leurquin; William Vandendaele; Aby-Gaël Viey; Romain Gwoziecki; René Escoffier; R. Salot; Ghislain Despesse; Ferdinando Iucolano; Roberto Modica; Aurore Constant (IRPS, 2022)

Drain voltage impact on charge redistribution in GaN-on-Si E-mode MOSc-HEMTs. - Camille Leurquin; William Vandendaele; Romain Gwoziecki; B. Mohamad; Ghislain Despesse; Ferdinando Iucolano; Roberto Modica; Aurore Constant (IRPS, 2023)

Reliability of GaN MOSc-HEMTs: From TDDB to Threshold Voltage Instabilities (Invited). - William Vandendaele; Camille Leurquin; R. Lavieville; Marie-Anne Jaud; Abygaël Viey; Romain Gwoziecki; B. Mohamad; Etienne Nowak; Aurore Constant; Ferdinando Iucolano (IRPS, 2023)