Carbon-doped Ge2Sb2Te5 phase-change memory devices featuring reduced RESET current and power consumption. - Quentin Hubert; Carine Jahan; Alain Toffoli; Gabriele Navarro; S. Chandrashekar; Pierre Noe; Veronique Sousa; Luca Perniola; J.-F. Nodin; A. Persico; S. Maitrejean; A. Roule; et al. (ESSDERC, 2012)

High temperature reliability of μtrench Phase-Change Memory devices. - Gabriele Navarro; Sarra Souiki; Alain Persico; Veronique Sousa; Jean-François Nodin; Carine Jahan; François Aussenac; Vincent Delaye; Olga Cueto; Luca Perniola; Barbara De Salvo (Microelectron. Reliab., 2012)

Development and application of the Oxide Stress Separation technique for the measurement of ONO leakage currents at low electric fields in 40 nm floating gate embedded-flash memory. - Adam Dobri; Simon Jeannot; Fausto Piazza; Carine Jahan; Jean Coignus; Luca Perniola; Francis Balestra (Microelectron. Reliab., 2017)

16kbit 1T1R OxRAM arrays embedded in 28nm FDSOI technology demonstrating low BER, high endurance, and compatibility with core logic transistors. - Laurent Grenouillet; Niccolo Castellani; Alain Persico; Valentina Meli; Simon Martin 006; Olivier Billoint; R. Segaud; Stefania Bernasconi; C. Pellissier; Carine Jahan; Christelle Charpin-Nicolle; P. Dezest; et al. (IMW, 2021)

Reliability assessment of hafnia-based ferroelectric devices and arrays for memory and AI applications (Invited). - Laurent Grenouillet; Justine Barbot; J. Laguerre; Simon Martin 006; Catherine Carabasse; M. Louro; Messaoud Bedjaoui; S. Minoret; S. Kerdilès; C. Boixaderas; Thomas Magis; Carine Jahan; et al. (IRPS, 2023)

A synergistic fault tolerance framework for Mbit 28nm embedded RRAM. - Papavramidou Panagiota; Sebastien Ricavy; Christopher Mounet; Carine Jahan; Niccolo Castellani; François Andrieu (IOLTS, 2024)