Electrical characterization and modeling of resistance switching nio-based random accss memories. - Carlo Cagli (2010)

On the impact of Ag doping on performance and reliability of GeS2-based Conductive Bridge Memories. - Elisa Vianello; Carlo Cagli; Gabriel Molas; Emeline Souchier; Philippe Blaise; Catherine Carabasse; G. Rodriguez; V. Jousseaume; Barbara De Salvo; Florian Longnos; Faiz Dahmani; P. Verrier; et al. (ESSDERC, 2012)

Benefit of Al2O3/HfO2 bilayer for BEOL RRAM integration through 16kb memory cut characterization. - M. Azzaz; A. Benoist; Elisa Vianello; Daniele Garbin; Eric Jalaguier; Carlo Cagli; C. Charpin; Stefania Bernasconi; Simon Jeannot; T. Dewolf; G. Audoit; C. Guedj; et al. (ESSDERC, 2015)

Identification of the generation/rupture mechanism of filamentary conductive paths in ReRAM devices using oxide failure analysis. - Alberto Rodriguez-Fernandez; Carlo Cagli; Luca Perniola; Jordi Suñé; Enrique Miranda 002 (Microelectron. Reliab., 2017)

Sub-pJ consumption and short latency time in RRAM arrays for high endurance applications. - Gilbert Sassine; Cecile Nail; Luc Tillie; Diego Alfaro Robayo; Alexandre Levisse; Carlo Cagli; Khalil El Hajjam; Jean-Francois Nodin; Elisa Vianello; Mathieu Bernard; Gabriel Molas; Etienne Nowak (IRPS, 2018)

Performance Improvement on HfO2-Based 1T Ferroelectric NVM by Electrical Preconditioning. - Carlo Cagli; Luca Perniola; Fred Gaillard; Stefan Dünkel; Thomas Melde; B. Mueller; Martin Trentzsch; Sven Wittek; Sven Beyer (IRPS, 2019)

Frequency modulation of conductance level in PCM device for neuromorphic applications. - Ahmed Trabelsi; Carlo Cagli; Tifenn Hirtzlin; Olga Cueto; Marie Claire Cyrille; Elisa Vianello; Valentina Meli; Veronique Sousa; Guillaume Bourgeois; François Andrieu (ESSCIRC, 2022)