Analysis and optimisation through innovative driving strategy of high power IGBT performances/EMI reduction trade-off for converter systems in railway applications. - Giovanni Busatto; Luigi Fratelli; Carmine Abbate; Roberta Manzo; Francesco Iannuzzo (Microelectron. Reliab., 2004)

The high frequency behaviour of high voltage and current IGBT modules. - Carmine Abbate; Giovanni Busatto; Luigi Fratelli; Francesco Iannuzzo (Microelectron. Reliab., 2006)

Investigation of MOSFET failure in soft-switching conditions. - Francesco Iannuzzo; Giovanni Busatto; Carmine Abbate (Microelectron. Reliab., 2006)

The robustness of series-connected high power IGBT modules. - Carmine Abbate; Giovanni Busatto; Luigi Fratelli; Francesco Iannuzzo; B. Cascone; Roberta Manzo (Microelectron. Reliab., 2007)

IGBT modules robustness during turn-off commutation. - Giovanni Busatto; Carmine Abbate; B. Abbate; Francesco Iannuzzo (Microelectron. Reliab., 2008)

Instable mechanisms during unclamped operation of high power IGBT modules. - Giovanni Busatto; Carmine Abbate; Francesco Iannuzzo; P. Cristofaro (Microelectron. Reliab., 2009)

IGBT RBSOA non-destructive testing methods: Analysis and discussion. - Carmine Abbate; Giovanni Busatto; Francesco Iannuzzo (Microelectron. Reliab., 2010)

Operation of SiC normally-off JFET at the edges of its safe operating area. - Carmine Abbate; Giovanni Busatto; Francesco Iannuzzo (Microelectron. Reliab., 2011)

Unclamped repetitive stress on 1200 V normally-off SiC JFETs. - Carmine Abbate; Giovanni Busatto; Francesco Iannuzzo (Microelectron. Reliab., 2012)

Scattering parameter approach applied to the stability analysis of power IGBTs in short circuit. - Carmine Abbate; Giovanni Busatto; Francesco Iannuzzo; Cesare Ronsisvalle; Annunziata Sanseverino; Francesco Velardi (Microelectron. Reliab., 2013)

Thermal instability during short circuit of normally-off AlGaN/GaN HFETs. - Carmine Abbate; Francesco Iannuzzo; Giovanni Busatto (Microelectron. Reliab., 2013)

Thermal damage in SiC Schottky diodes induced by SE heavy ions. - Carmine Abbate; Giovanni Busatto; Paolo Cova; Nicola Delmonte; Francesco Giuliani; Francesco Iannuzzo; Annunziata Sanseverino; Francesco Velardi (Microelectron. Reliab., 2014)

Turn-off instabilities in large area IGBTs. - Carmine Abbate; Francesco Iannuzzo; Giovanni Busatto; Annunziata Sanseverino; Francesco Velardi; Cesare Ronsisvalle; James Victory (Microelectron. Reliab., 2014)

Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT. - Carmine Abbate; Giovanni Busatto; Francesco Iannuzzo; S. Mattiazzo; Annunziata Sanseverino; Luca Silvestrin; D. Tedesco; Francesco Velardi (Microelectron. Reliab., 2015)

Experimental study of the instabilities observed in 650 V enhancement mode GaN HEMT during short circuit. - Carmine Abbate; Giovanni Busatto; Annunziata Sanseverino; D. Tedesco; Francesco Velardi (Microelectron. Reliab., 2017)

Progressive drain damage in SiC power MOSFETs exposed to ionizing radiation. - Carmine Abbate; Giovanni Busatto; S. Mattiazzo; Annunziata Sanseverino; Luca Silvestrin; D. Tedesco; Francesco Velardi (Microelectron. Reliab., 2018)

Measure of high frequency input impedance to study the instability of power devices in short circuit. - Carmine Abbate; Giovanni Busatto; Annunziata Sanseverino; D. Tedesco; Francesco Velardi (Microelectron. Reliab., 2018)

Failure analysis of 650 V enhancement mode GaN HEMT after short circuit tests. - Carmine Abbate; Giovanni Busatto; Annunziata Sanseverino; D. Tedesco; Francesco Velardi (Microelectron. Reliab., 2018)