A new structure to monitor electrical transients during programming of EEPROM memory cells. - Nicolas Baboux; Carole Plossu; Philippe Boivin (Microelectron. Reliab., 2004)

Dynamic Fowler-Nordheim injection in EEPROM tunnel oxides at realistic time scales. - Nicolas Baboux; Carole Plossu; Philippe Boivin (Microelectron. Reliab., 2005)

Peculiarities of electron tunnel injection to the drain of EEPROMs. - Nicolas Baboux; C. Busseret; Carole Plossu; Philippe Boivin (Microelectron. Reliab., 2007)

Parameters extraction of hafnium based gate oxide capacitors. - T. Nguyen; C. Busseret; Liviu Militaru; A. Poncet; D. Aimé; Nicolas Baboux; Carole Plossu (Microelectron. Reliab., 2007)

3D substrate modeling; from a first order electrical analysis, towards some possible signal fluctuations consideration, for radio frequency circuits. - Christian Gontrand; Fengyuan Sun; José Ricardo Cárdenas-Valdez; Yue Ma; Carole Plossu; Françis Calmon; José-Cruz Nuñez Perez; Jacques Verdier (Microelectron. J., 2014)

An efficient and simple compact modeling approach for 3-D interconnects with IC's stack global electrical context consideration. - Jean-Etienne Lorival; Françis Calmon; Fengyuan Sun; Felipe Frantz; Carole Plossu; Martine Le Berre; Ian O'Connor; Olivier Valorge; Jean Charbonnier; David Henry; Christian Gontrand (Microelectron. J., 2015)