Electrical Characterization of Fabricated pin Diodes made from SixGe1-x-ySny with an Embedded Ge1-xSnx Quantum Well. - P. Povolni; Daniel Schwarz; Caterina J. Clausen; Yasmine Elogail; Hannes S. Funk; Michael Oehme; David Weißhaupt; Jörg Schulze (MIPRO, 2019)

Carrier mobilities in heavily doped pseudomorphic Ge1-x Snx-epilayers. - Marco M. Dettling; David Weißhaupt; Hannes S. Funk; Michal Kern; Fritz Berkmann; Caterina J. Clausen; Michael Oehme; Daniel Schwarz; Joris van Slageren; Jörg Schulze (MIPRO, 2020)

Investigation of Ge-Based P-Channel Planar-Doped Barrier FETs integrated on Si. - Yasmine Elogail; Fritz Berkmann; Caterina J. Clausen; Inga A. Fischer; Linda A. Hänel; Daniel Schwarz; Jörg Schulze (Microelectron. J., 2022)