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Random telegraph signal: A sensitive and nondestructive tool for gate oxide single trap characterization. - Cédric Leyris; Frédéric Martinez; M. Valenza; Alain Hoffmann; J. C. Vildeuil (Microelectron. Reliab., 2007)

0.13µm SiGe BiCMOS Technology Fully Dedicated to mm-Wave Applications. - Grégory Avenier; Malick Diop; Pascal Chevalier 002; Germaine Troillard; Nicolas Loubet; Julien Bouvier; Linda Depoyan; Nicolas Derrier; Michel Buczko; Cédric Leyris; Samuel Boret; Sébastien Montusclat; et al. (IEEE J. Solid State Circuits, 2009)