Effect of Pre-Existing Defects on Reliability Assessment of High-K Gate Dielectrics. - Gennadi Bersuker; Jang H. Sim; Chadwin D. Young; Rino Choi; Peter Zeitzoff; George A. Brown; Byoung Hun Lee; Robert W. Murto (Microelectron. Reliab., 2004)

Probing stress effects in HfO2 gate stacks with time dependent measurements. - Chadwin D. Young; Gennadi Bersuker; Yuegang Zhao; Jeff J. Peterson; Joel Barnett; George A. Brown; Jang H. Sim; Rino Choi; Byoung Hun Lee; Peter Zeitzoff (Microelectron. Reliab., 2005)

Electrical characterization and analysis techniques for the high-kappa era. - Chadwin D. Young; Dawei Heh; Arnost Neugroschel; Rino Choi; Byoung Hun Lee; Gennadi Bersuker (Microelectron. Reliab., 2007)

A novel approach to characterization of progressive breakdown in high-k/metal gate stacks. - R. Pagano; Salvatore Lombardo; Felix Palumbo; Paul Kirsch; S. A. Krishnan; Chadwin D. Young; Rino Choi; Gennadi Bersuker; James H. Stathis (Microelectron. Reliab., 2008)

Temperature dependent time-to-breakdown (TBD) of TiN/HfO2 n-channel MOS devices in inversion. - N. A. Chowdhury; X. Wang; Gennadi Bersuker; Chadwin D. Young; N. Rahim; Durga Misra (Microelectron. Reliab., 2009)

Electrical Analysis of High Dielectric Constant Insulator and Metal Gate Metal Oxide Semiconductor Capacitors on Flexible Bulk Mono-Crystalline Silicon. - Mohamed T. Ghoneim; Jhonathan P. Rojas; Chadwin D. Young; Gennadi Bersuker; Muhammad Mustafa Hussain (IEEE Trans. Reliab., 2015)

Experimental Evaluation of Circuit-Based Modeling of the NBTI Effects in Double-Gate FinFETs. - Nebojsa D. Jankovic; Chadwin D. Young (Microelectron. Reliab., 2016)

Advances of the development of a ferroelectric field-effect transistor on Ge(001). - Patrick Ponath; Agham B. Posadas; Yuan Ren; Xiaoyu Wu; Keji Lai; Alex Demkov; Michael Schmidt; Ray Duffy; Paul K. Hurley; Jian Wang; Chadwin D. Young; Rama K. Vasudevan; et al. (ICICDT, 2017)

Electrical characterization of process induced effects on non-silicon devices. - Chadwin D. Young; Pavel Bolshakov; Rodolfo A. Rodriguez-Davila; Peng Zhao; Ava Khosravi; Israel Mejia; Manuel Quevedo-Lopez; Christopher L. Hinkle; Robert M. Wallace (ICICDT, 2018)

Positive Bias Instability in ZnO TFTs with Al2O3 Gate Dielectric. - Pavel Bolshakov; Rodolfo A. Rodriguez-Davila; Manuel Quevedo-Lopez; Chadwin D. Young (IRPS, 2019)

Enhanced Threshold Voltage Stability in ZnO Thin-Film-Transistors by Excess of Oxygen in Atomic Layer Deposited Al2O3. - Rodolfo A. Rodriguez-Davila; Richard A. Chapman; Massimo Catalano; Manuel Quevedo-Lopez; Chadwin D. Young (IRPS, 2020)

Reliability Assessment of a-IGZO and ZnO Thin Film Transistors (TFTs) to X-ray irradiation. - Rodolfo A. Rodriguez-Davila; L. Fernandez-Izquierdo; J. Fink; T. Moise; Robert C. Baumann; B. Gnade; Manuel Quevedo-Lopez; Chadwin D. Young (IRPS, 2024)

Investigation of the Impact of Hydrogen Defects on the VT shift in Back-Gate IGZO TFTs. - Mohammad Fathi; Md Abdullah Al Mamun; Rodolfo A. Rodriguez-Davila; Shumiya Alam; Jongchan Kim; Tanvir Haider Pantha; Milan Pesic; Manuel Quevedo-Lopez; Kyeongjae Cho; Sourav Dutta; Chadwin D. Young (IRPS, 2025)