Ultra-high Tunneling Electroresistance Ratio (2 × 104) & Endurance (108) in Oxide Semiconductor-Hafnia Self-rectifying (1.5 × 103) Ferroelectric Tunnel Junction. - Junghyeon Hwang; Chaeheon Kim; Hunbeom Shin; Hwayoung Kim; Sang-Hee Ko Park; Sanghun Jeon (VLSI Technology and Circuits, 2023)

Low-Damage Processed and High-Pressure Annealed High-k Hafnium Zirconium Oxide Capacitors near Morphotropic Phase Boundary with Record-Low EOT of 2.4Å & high-k of 70 for DRAM Technology. - Venkateswarlu Gaddam; Junghyeon Hwang; Hunbeom Shin; Chaeheon Kim; Giuk Kim; Hyung-Jun Kim; Jooho Lee; Hyun-Cheol Kim; Bumsu Park; Suhwan Lim; Sang Yun Kim; Kwangsoo Kim; et al. (VLSI Technology and Circuits, 2024)