Memoryless non-linearity in B-Substitution doped and undoped graphene FETs: A comparative investigation. - Chandrasekar Lakshumanan; Kumar Prasannajit Pradhan (IET Circuits Devices Syst., 2021)

Back-gate bias effect on the linearity of pocket doped FDSOI MOSFET. - Rameez Raja Shaik; Chandrasekar Lakshumanan; Jean-Pierre Raskin; Kumar Prasannajit Pradhan (Microelectron. J., 2022)