Electrically Programmable Fuse (eFUSE): From Memory Redundancy to Autonomic Chips. - Norman Robson; John Safran; Chandrasekharan Kothandaraman; Alberto Cestero; Xiang Chen; Raj Rajeevakumar; Alan Leslie; Dan Moy; Toshiaki Kirihata; Subramanian S. Iyer (CICC, 2007)

Impact of 3D copper TSV integration on 32SOI FEOL and BEOL reliability. - Mukta G. Farooq; Giuseppe La Rosa; Fen Chen; Prakash Periasamy; Troy L. Graves-abe; Chandrasekharan Kothandaraman; C. Collins; W. Landers; J. Oakley; J. Liu; John Safran; S. Ghosh; et al. (IRPS, 2015)

Oxygen vacancy traps in Hi-K/Metal gate technologies and their potential for embedded memory applications. - Chandrasekharan Kothandaraman; X. Chen; Dan Moy; Dallas Lea; Sami Rosenblatt; Faraz Khan; Derek Leu; Toshiaki Kirihata; D. Ioannou; Giuseppe La Rosa; Jeffrey B. Johnson; Norman Robson; et al. (IRPS, 2015)

Low-current Spin Transfer Torque MRAM. - Guohan Hu; J. J. Nowak; G. Lauer; J. H. Lee; J. Z. Sun; J. Harms; Anthony J. Annunziata; S. Brown; W. Chen; Y. H. Kim; N. Marchack; Sunil Murthy; et al. (VLSI-DAT, 2017)