Reversible nonvolatile and threshold switching characteristics in Cu/high-k/Si devices. - Chandreswar Mahata; Wonwoo Kim; Shiwhan Kim; Muhammad Ismail; Min-Hwi Kim; Sungjun Kim; Byung-Gook Park (IEICE Electron. Express, 2019)

Zinc Tin Oxide Synaptic Device for Neuromorphic Engineering. - Ji-Ho Ryu; Boram Kim; Fayyaz Hussain; Muhammad Ismail; Chandreswar Mahata; Teresa Oh; Muhammad Imran; Kyung Kyu Min; Tae-Hyeon Kim; Byung-Do Yang; Seongjae Cho; Byung-Gook Park; et al. (IEEE Access, 2020)