Analysis of Logic-in-Memory Full Adder Circuit With Floating Gate Field Effect Transistor (FGFET). - Sueyeon Kim; Insoo Choi; Sangki Cho; Myounggon Kang; Seungjae Baik; Changho Ra; Jongwook Jeon (IEEE Access, 2023)

Investigation on Artificial Intelligence Hardware Architecture Design Based on Logic-in-Memory Ferroelectric Fin Field-Effect Transistor at Sub-3nm Technology Nodes. - Changho Ra; Huijun Kim; Juhwan Park; Gwanoh Youn; Uyong Lee; Junsu Heo; Chester Sungchung Park; Jongwook Jeon (Adv. Intell. Syst., 2025)