SRAM design in fully-depleted SOI technology. - Borivoje Nikolic; Changhwan Shin; Min Hee Cho; Xin Sun; Tsu-Jae King Liu; Bich-Yen Nguyen (ISCAS, 2010)

Quasi-Planar Tri-gate (QPT) bulk CMOS technology for single-port SRAM application. - Yasumasa Tsukamoto; Makoto Yabuuchi; Hidehiro Fujiwara; Koji Nii; Changhwan Shin; Tsu-Jae King Liu (ISQED, 2012)

Comparative study in work-function variation: Gaussian vs. Rayleigh distribution for grain size. - Hyohyun Nam; Changhwan Shin (IEICE Electron. Express, 2013)

Effect of double-patterning and double-etching on the line-edge-roughness of multi-gate bulk MOSFETs. - In Jun Park; Changhwan Shin (IEICE Electron. Express, 2013)

Analysis and modeling for random telegraph noise of GIDL current in saddle MOSFET for DRAM application. - Dyukyoung Moon; Hyunseul Lee; Changhwan Shin; Hyungcheol Shin (IEICE Electron. Express, 2014)

State-of-the-art silicon device miniaturization technology and its challenges. - Changhwan Shin (IEICE Electron. Express, 2014)

Experimental demonstration of a ferroelectric FET using paper substrate. - Changhwan Shin; Gwang-Geun Lee; Dae-Hee Han; Seung-Pil Han; Eisuke Tokumitsu; Shun'ichiro Ohmi; Dong-Joo Kim; Hiroshi Ishiwara; Minseo Park; Seung-Hyun Kim; Wan-Gyu Lee; Yun Jeong Hwang; et al. (IEICE Electron. Express, 2014)

Impact of the double-patterning technique on the LER-induced threshold voltage variation in symmetric tunnel field-effect transistor. - Seulki Park; Ju Han Lee; Changhwan Shin (IEICE Electron. Express, 2015)

Amorphous Indium Zinc Oxide Thin-Film Transistor with Steep Subthreshold Slope by Negative Capacitance. - Karam Cho; Jaesung Jo; Changhwan Shin (IEICE Trans. Electron., 2016)

Design Optimization for Process-Variation-Tolerant 22-nm FinFET-Based 6-T SRAM Cell with Worst-Case Sampling Method. - Sangheon Oh; Changhwan Shin (IEICE Trans. Electron., 2016)

Layout engineering to suppress hysteresis of negative capacitance FinFET. - Eunah Ko; Jaesung Jo; Changhwan Shin; Bich-Yen Nguyen (ICICDT, 2017)

Machine Learning (ML)-Based Model to Characterize the Line Edge Roughness (LER)-Induced Random Variation in FinFET. - Jaehyuk Lim; Changhwan Shin (IEEE Access, 2020)

Abruptly-Switching MoS₂-Channel Atomic-Threshold-Switching Field-Effect Transistor With AgTi/HfO₂-Based Threshold Switching Device. - Sojin Jeong; Sangwoo Han; Ho-Jun Lee; Deokjoon Eom; Gisu Youm; Yejoo Choi; Seungjun Moon; Kyungjin Ahn; Jinju Oh; Changhwan Shin (IEEE Access, 2021)

Probabilistic Artificial Neural Network for Line-Edge-Roughness-Induced Random Variation in FinFET. - Jaehyuk Lim; Jinwoong Lee; Changhwan Shin (IEEE Access, 2021)

GAN-Based Framework for Unified Estimation of Process-Induced Random Variation in FinFET. - Taeeon Park; Jihwan Kwak; Hongjoon Ahn; Jinwoong Lee; Jaehyuk Lim; Sangho Yu; Changhwan Shin; Taesup Moon (IEEE Access, 2022)

Quantitative Evaluation of Line-Edge Roughness in Various FinFET Structures: Bayesian Neural Network With Automatic Model Selection. - Sangho Yu; Sang Min Won; Hyoung Won Baac; Donghee Son; Changhwan Shin (IEEE Access, 2022)

Impact of Chamber/Annealing Temperature on the Endurance Characteristic of Zr: HfO2 Ferroelectric Capacitor. - Yejoo Choi; Changwoo Han; Jaemin Shin 003; Seungjun Moon; Jinhong Min; Hyeonjung Park; Deokjoon Eom; Jehoon Lee; Changhwan Shin (Sensors, 2022)

Strain-Dependent Photoacoustic Characteristics of Free-Standing Carbon-Nanocomposite Transmitters. - Muhammad Faraz; Muhammad Awais Abbasi; Donghee Son; Changhwan Shin; Kyu-Tae Lee; Sang Min Won; Hyoung Won Baac (Sensors, 2022)

Comparative Study of Novel u-Shaped SOI FinFET Against Multiple-Fin Bulk/SOI FinFET. - Myoungsu Son; Juho Sung; Hyoung Won Baac; Changhwan Shin (IEEE Access, 2023)

Column Row Convolutional Neural Network: Reducing Parameters for Efficient Image Processing. - Seong-il Im; Jae-Seung Jeong; Junseo Lee; Changhwan Shin; Jeong Ho Cho; Hyunsu Ju (Neural Comput., 2024)

Learning hidden relationship between environment and control variables for direct control of automated greenhouse using Transformer-based model. - Junseo Lee; Seongil Im; Jae-Seung Jeong; Taek Sung Lee; Soo Hyun Park; Changhwan Shin; Hyunsu Ju; Hyung-Jun Kim (Comput. Electron. Agric., 2025)

Device Design Guidelines to Boost Up AC Performance of CFET (Complementary Field-Effect-Transistor)-Based Inverter. - Jaehyuk Lim; Donghwan Han; Juho Sung; Seokchan Yoon; Sanghyun Kang; Gwon Kim; Hyoung Won Baac; Changhwan Shin (IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 2025)

Study of 3-D Line Edge Roughness (LER) in Vertical Channel Array Transistor for DRAM. - Jaehyuk Lim; Seokchan Yoon; Juho Sung; Sanghyun Kang; Gwon Kim; Hyoung Won Baac; Changhwan Shin (IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 2025)