A selective gate-recess and passivation integrated process for high-performance enhancement-mode GaN HEMTs on an ultrathin barrier. - Xuankun Wu; Changxin Mi; Zhe Cheng; Shujie Xie; Boyang Yi; Mengxiao Lian; Jiaheng He; Zongyang Hu; Yun Zhang (Microelectron. J., 2026)