Characterization and analysis of gate-all-around Si nanowire transistors for extreme scaling. - Ru Huang 001; Runsheng Wang; Jing Zhuge; Changze Liu; Tao Yu; Liangliang Zhang; Xin Huang; Yujie Ai; Jinbin Zou; Yuchao Liu; Jiewen Fan; Huailin Liao; et al. (CICC, 2011)

HCI and NBTI induced degradation in gate-all-around silicon nanowire transistors. - Ru Huang 001; Runsheng Wang; Changze Liu; Liangliang Zhang; Jing Zhuge; Yu Tao; Jinbin Zou; Yuchao Liu; Yangyuan Wang (Microelectron. Reliab., 2011)

Self-heating effects in gate-all-around silicon nanowire MOSFETs: Modeling and analysis. - Xin Huang; Tianwei Zhang 002; Runsheng Wang; Changze Liu; Yuchao Liu; Ru Huang 001 (ISQED, 2012)

Systematical study of 14nm FinFET reliability: From device level stress to product HTOL. - Changze Liu; Hyun-Chul Sagong; Hyejin Kim; Seungjin Choo; Hyunwoo Lee; Yoohwan Kim; Hyunjin Kim; Bisung Jo; Minjung Jin; Jinjoo Kim; Sangsu Ha; Sangwoo Pae; et al. (IRPS, 2015)

New insights into the HCI degradation of pass-gate transistor in advanced FinFET technology. - Pengpeng Ren; Changze Liu; Sanping Wan; Jiayang Zhang; Zhuoqing Yu; Nie Liu; Yongsheng Sun; Runsheng Wang; Canhui Zhan; Zhenghao Gan; Waisum Wong; Yu Xia; et al. (IRPS, 2018)

Investigation on NBTI-induced dynamic variability in nanoscale CMOS devices: Modeling, experimental evidence, and impact on circuits. - Shaofeng Guo; Runsheng Wang; Pengpeng Ren; Changze Liu; Mulong Luo; Xiaobo Jiang; Yangyuan Wang; Ru Huang 001 (Microelectron. Reliab., 2018)

Analog IC Aging-induced Degradation Estimation via Heterogeneous Graph Convolutional Networks. - Tinghuan Chen; Qi Sun 002; Canhui Zhan; Changze Liu; Huatao Yu; Bei Yu 001 (ASP-DAC, 2021)

Performance Trade-Off Scenarios for GAA Nanosheet FETs Considering Inner-spacers and Epi-induced Stress: Understanding & Mitigating Process Risks. - Amita Rawat; Krishna K. Bhuwalka; Philippe Matagne; Bjorn Vermeersch; Hao Wu; Geert Hellings; Julien Ryckaert; Changze Liu (ESSDERC, 2021)

Deep H-GCN: Fast Analog IC Aging-Induced Degradation Estimation. - Tinghuan Chen; Qi Sun 002; Canhui Zhan; Changze Liu; Huatao Yu; Bei Yu 001 (IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 2022)