A CMOS-Compatible Poly-Si Nanowire Device with Hybrid Sensor/Memory Characteristics for System-on-Chip Applications. - Min-Cheng Chen; Hao-Yu Chen; Chia-Yi Lin; Chao-Hsin Chien; Tsung-Fan Hsieh; Jim-Tong Horng; Jian-Tai Qiu; Chien-Chao Huang; Chia-Hua Ho; Fu-Liang Yang (Sensors, 2012)

Noncontact Remote Doping for High-performance Two-dimensional Electronics. - Po-Heng Pao; Ren-Hao Cheng; Yi-Hsiu Huang; Yu-Ying Yang; Tzu-Hsien Sang; Chia-Ming Tsai; Chao-Hsin Chien (ASICON, 2023)

Scaled contact length with low contact resistance in monolayer 2D channel transistors. - Wen-Chia Wu; Terry Y. T. Hung; D. Mahaveer Sathaiya; Dongxu Fan; Goutham Arutchelvan; Chen-Feng Hsu; Sheng-Kai Su; Ang-Sheng Chou; Edward Chen; Weisheng Li; Zhihao Yu; Hao Qiu; et al. (VLSI Technology and Circuits, 2023)

High Performance Transistor of Aligned Carbon Nanotubes in a Nanosheet Structure. - Nathaniel Safron; Tzu-Ang Chao; Shengman Li; Shreyam Natani; San Lin Liew; Carlo Gilardi; Hsin-Yuan Chiu; Sheng-Kai Su; Andrew Bechdolt; Gilad Zeevi; Zichen Zhang 019; Matthias Passlack; et al. (VLSI Technology and Circuits, 2024)

On the Extreme Scaling of Transistors with Monolayer MOS2 Channel. - Wen-Chia Wu; Terry Y. T. Hung; D. Mahaveer Sathaiya; Edward Chen; Chen-Feng Hsu; Walker Yun; Hsiang-Chi Hu; Bo-Heng Liu; T. Y. Lee; Chi-Chung Kei; Wen-Hao Chang; Jin Cai; et al. (VLSI Technology and Circuits, 2024)