Novel high voltage RESURF AlGaN/GaN HEMT with charged buffer layer. - Jiayun Xiong; Chao Yang 033; Jie Wei; Junfeng Wu; Bo Zhang 027; Xiaorong Luo (Sci. China Inf. Sci., 2016)

High-voltage trench-gate hole-gas enhancement-mode HEMT with multi-conduction channels. - Chao Yang 033; Xiaorong Luo; Siyu Deng; Fu Peng; Bo Zhang 027 (Sci. China Inf. Sci., 2018)

Simulation of a high-performance enhancement-mode HFET with back-to-back graded AlGaN layers. - Fu Peng; Chao Yang 033; Siyu Deng; Dongya Ouyang; Bo Zhang 027; Jie Wei; Xiaorong Luo (Sci. China Inf. Sci., 2019)