Electrical characterization and quantum modeling of MOS capacitors with ultra-thin oxides (1.4-3 nm). - Raphael Clerc; Alessandro S. Spinelli; Gérard Ghibaudo; Charles Leroux; G. Pananakakis (Microelectron. Reliab., 2001)

Accurate determination of flat band voltage in advanced MOS structure. - Charles Leroux; Gérard Ghibaudo; Gilles Reimbold (Microelectron. Reliab., 2007)

Initial and PBTI-induced traps and charges in Hf-based oxides/TiN stacks. - Gilles Reimbold; Jérôme Mitard; Xavier Garros; Charles Leroux; Gérard Ghibaudo; François Martin (Microelectron. Reliab., 2007)

Effective work function engineering by sacrificial lanthanum diffusion on HfON-based 14 nm NFET devices. - Carlos Suarez-Segovia; Charles Leroux; Florian Domengie; Karen Dabertrand; Vincent Joseph; Giovanni Romano 003; Pierre Caubet; Stephane Zoll; Olivier Weber; Gérard Ghibaudo; Gilles Reimbold; Michel Haond (ESSDERC, 2015)

Parasitic Capacitance Analysis in Short Channel GaN MIS-HEMTs. - Roméo Kom Kammeugne; Charles Leroux; Tadeu Mota Frutuoso; Jacques Cluzel; Laura Vauche; Cyrille Le Royer; Romain Gwoziecki; Xavier Garros; Fred Gaillard; Matthew Charles; Edwige Bano; Gérard Ghibaudo (ESSDERC, 2021)

Reliable method for low field temperature dependent mobility extraction at Al2O3/GaN interface. - B. Rrustemi; Aby-Gaël Viey; Marie-Anne Jaud; François Triozon; William Vandendaele; Charles Leroux; Jacques Cluzel; S. Martin; Cyrille Le Royer; Romain Gwoziecki; Roberto Modica; Ferdinando Iucolano; et al. (ESSDERC, 2021)