Transition-metal-oxide-based resistance-change memories. - Siegfried F. Karg; Gerhard Ingmar Meijer; J. Georg Bednorz; Charles T. Rettner; Alejandro G. Schrott; Eric A. Joseph; Chung Hon Lam; Markus Janousch; Urs Staub; Fabio LaMattina; Santos F. Alvarado; Daniel Widmer; et al. (IBM J. Res. Dev., 2008)

Phase-change random access memory: A scalable technology. - Simone Raoux; Geoffrey W. Burr; Matthew J. Breitwisch; Charles T. Rettner; Yi-Chou Chen; Robert M. Shelby; Martin Salinga; Daniel Krebs; Shih-Hung Chen; Hsiang-Lan Lung; Chung Hon Lam (IBM J. Res. Dev., 2008)

Nanoscale electronic synapses using phase change devices. - Bryan L. Jackson; Bipin Rajendran; Gregory S. Corrado; Matthew J. Breitwisch; Geoffrey W. Burr; Roger Cheek; Kailash Gopalakrishnan; Simone Raoux; Charles T. Rettner; Alvaro Padilla; Alejandro G. Schrott; Rohit S. Shenoy; et al. (ACM J. Emerg. Technol. Comput. Syst., 2013)