Recessed and P-GaN Regrowth Gate Development for Normally-off AlGaN/GaN HEMTs. - Chaymaa Haloui; Gaëtan Toulon; Josiane Tasselli; Yvon Cordier; Éric Frayssinet; Karine Isoird; Frédéric Morancho; Mathieu Gavelle (MIXDES, 2020)

Design Optimization of a New Nanostructured P-GaN Gate for Normally-off GaN HEMTs. - Daniel Rouly; Josiane Tasselli; Patrick Austin; Chaymaa Haloui; Karine Isoird; Frédéric Morancho (MIXDES, 2022)