Comparison Between the Behaviour of Punch-Through and Non-Punch-Through Insulated Gate Bipolar Transistors Under High Temperature Reverse Bias Stress. - Cheick Oumar Maïga; Hamid Toutah; Boubekeur Tala-Ighil; Bertrand Boudart (Microelectron. Reliab., 2004)

Trench insulated gate bipolar transistors submitted to high temperature bias stress. - Cheick Oumar Maïga; Hamid Toutah; Boubekeur Tala-Ighil; Bertrand Boudart (Microelectron. Reliab., 2005)