Gate leakage current suppression and reliability improvement for ultra-low EOT Ge MOS devices by suitable HfAlO/HfON thickness and sintering temperature. - Wei-Fong Chi; Kuei-Shu Chang-Liao; Shih-Han Yi; Chen-Chien Li; Yan-Lin Li (Microelectron. Reliab., 2015)

Improved reliability characteristics of Ge MOS devices by capping Hf or Zr on interfacial layer. - Yan-Lin Li; Kuei-Shu Chang-Liao; Yu-Wei Chang; Tse-Jung Huang; Chen-Chien Li; Zhao-Chen Gu; Po-Yen Chen; Tzung-Yu Wu; Jiayi Huang; Fu-Chuan Chu; Shih-Han Yi (Microelectron. Reliab., 2017)