Extremely Scaled Bottom Gate a-IGZO Transistors Using a Novel Patterning Technique Achieving Record High Gm of 479.5 μS/μm (VDS of 1 V) and fT of 18.3 GHz (VDS of 3 V). - Chengkuan Wang; Annie Kumar; Kaizhen Han; Chen Sun 010; Haiwen Xu; Jishen Zhang; Yuye Kang; Qiwen Kong; Zijie Zheng; Yuxuan Wang; Xiao Gong (VLSI Technology and Circuits, 2022)