A 3.75Mb Embedded RRAM IP on 40nm High-Voltage CMOS Technology. - Yuan He; Chengxiang Ma; Xiangchao Ma; Yilong Huang; Qianze Zheng; Yue Xi; Qiumeng Wei; Jianing Li; Xiaodong He; Yongqin Wu; Weihai Bu; Kai Zheng; et al. (IMW, 2024)

Statistical Modeling of Time-Dependent Post-Programming Conductance Drift in Analog RRAM. - Ruofei Hu; Jianshi Tang; Yue Xi; Zhixing Jiang; Yuyao Lu; Chengxiang Ma; Junchen Li; Bin Gao 006; He Qian; Huaqiang Wu (IRPS, 2024)