A 60nm 6Gb/s/pin GDDR5 Graphics DRAM with Multifaceted Clocking and ISI/SSN-Reduction Techniques. - Seung-Jun Bae; Young-Soo Sohn; Kwang-Il Park; Kyoung-Ho Kim; Dae-Hyun Chung; Jingook Kim; Si-Hong Kim; Min-Sang Park; Jae-Hyung Lee; Sam-Young Bang; Ho-Kyung Lee; In-Soo Park; et al. (ISSCC, 2008)

A 7Gb/s/pin GDDR5 SDRAM with 2.5ns bank-to-bank active time and no bank-group restriction. - Tae-Young Oh; Young-Soo Sohn; Seung-Jun Bae; Min-Sang Park; Ji-Hoon Lim; Yong-Ki Cho; Dae-Hyun Kim 003; Dong-Min Kim; Hye-Ran Kim; Hyun-Joong Kim; Jin-Hyun Kim; Jin-Kook Kim; et al. (ISSCC, 2010)

A 40nm 2Gb 7Gb/s/pin GDDR5 SDRAM with a programmable DQ ordering crosstalk equalizer and adjustable clock-tracking BW. - Seung-Jun Bae; Young-Soo Sohn; Tae-Young Oh; Si-Hong Kim; Yun-Seok Yang; Dae-Hyun Kim 003; Sang-Hyup Kwak; Ho-Seok Seol; Chang-Ho Shin; Min-Sang Park; Gong-Heom Han; Byeong-Cheol Kim; et al. (ISSCC, 2011)

A 7 Gb/s/pin 1 Gbit GDDR5 SDRAM With 2.5 ns Bank to Bank Active Time and No Bank Group Restriction. - Tae-Young Oh; Young-Soo Sohn; Seung-Jun Bae; Min-Sang Park; Ji-Hoon Lim; Yong-Ki Cho; Dae-Hyun Kim 003; Dong-Min Kim; Hye-Ran Kim; Hyun-Joong Kim; Jin-Hyun Kim; Jin-Kook Kim; et al. (IEEE J. Solid State Circuits, 2011)