Enhanced degradation of n-MOSFETs with high-k/metal gate stacks under channel hot-carrier/gate-induced drain leakage alternating stress. - Dongwoo Kim 005; Seonhaeng Lee; Cheolgyu Kim; Chiho Lee; Jeongsoo Park 005; Bongkoo Kang (Microelectron. Reliab., 2012)

Effect of electron-electron scattering at an elevated temperature on device lifetime of nanoscale nMOSFETs. - Seonhaeng Lee; Dongwoo Kim 005; Cheolgyu Kim; N.-H. Lee; Gang-Jun Kim; Chiho Lee; Jeongsoo Park 005; Bongkoo Kang (Microelectron. Reliab., 2012)

Channel width dependence of mechanical stress effects induced by shallow trench isolation on device performance of nanoscale nMOSFETs. - Seonhaeng Lee; Dongwoo Kim 005; Cheolgyu Kim; Chiho Lee; Jeongsoo Park 005; Bongkoo Kang (Microelectron. Reliab., 2012)

Effect of negative bias temperature instability induced by a low stress voltage on nanoscale high-k/metal gate pMOSFETs. - Seonhaeng Lee; Cheolgyu Kim; Hyeokjin Kim; Gang-Jun Kim; Ji-Hoon Seo; Donghee Son; Bongkoo Kang (Microelectron. Reliab., 2013)

Voltage dependent degradation of HfSiON/SiO2 nMOSFETs under positive bias temperature instability. - Cheolgyu Kim; Hyeokjin Kim; Bongkoo Kang (Microelectron. Reliab., 2014)

Mechanism of warpage orientation rotation due to viscoelastic polymer substrates during thermal processing. - Cheolgyu Kim; Tae-Ik Lee; Min Sung Kim; Taek-Soo Kim (Microelectron. Reliab., 2017)

Fast and accurate method of lifetime estimation for HfSiON/SiO2 dielectric n-MOSFETs under positive bias temperature instability. - Giyoun Roh; Hyeokjin Kim; Cheolgyu Kim; Dongwoo Kim 005; Bongkoo Kang (Microelectron. Reliab., 2017)

Somatosensory actuator based on stretchable conductive photothermally responsive hydrogel. - Yusen Zhao; Chiao-Yueh Lo; Lecheng Ruan; Chen-Huan Pi; Cheolgyu Kim; Yousif Alsaid; Imri Frenkel; Rossana Rico; Tsu-Chin Tsao; Ximin He (Sci. Robotics, 2021)