13.2 A 1Tb 4b/Cell 96-Stacked-WL 3D NAND Flash Memory with 30MB/s Program Throughput Using Peripheral Circuit Under Memory Cell Array Technique. - Hwang Huh; Wanik Cho; Jinhaeng Lee; Yujong Noh; Yongsoon Park; Sunghwa Ok; Jongwoo Kim; Kayoung Cho; Hyunchul Lee; Geonu Kim; Kangwoo Park; Kwanho Kim; et al. (ISSCC, 2020)

A 321-Layer 2Tb 4b/cell 3D-NAND-Flash Memory with a 75MB/s Program Throughput. - Wanik Cho; Chanhui Jeong; Jongwoo Kim; Jongseok Jung; Keunseon Ahn; Jayoon Goo; Sangkyu Lee; Kayoung Cho; Tei Cho; Dauni Kim; Gwan Park; Yushin Ahn; et al. (ISSCC, 2025)