A 146-mm2 8-gb multi-level NAND flash memory with 70-nm CMOS technology. - Takahiko Hara; Koichi Fukuda; Kazuhisa Kanazawa; Noboru Shibata; Koji Hosono; Hiroshi Maejima; Michio Nakagawa; Takumi Abe; Masatsugu Kojima; Masaki Fujiu; Yoshiaki Takeuchi; Kazumi Amemiya; et al. (IEEE J. Solid State Circuits, 2006)

A 16Gb 3b/ Cell NAND Flash Memory in 56nm with 8MB/s Write Rate. - Yan Li; Seungpil Lee; Yupin Fong; Feng Pan; Tien-Chien Kuo; Jong Park; Tapan Samaddar; Hao Nguyen; Man Mui; Khin Htoo; Teruhiko Kamei; Masaaki Higashitani; et al. (ISSCC, 2008)

A 16 Gb 3-Bit Per Cell (X3) NAND Flash Memory on 56 nm Technology With 8 MB/s Write Rate. - Yan Li; Seungpil Lee; Yupin Fong; Feng Pan; Tien-Chien Kuo; Jongmin Park; Tapan Samaddar; Hao Nguyen; Man Mui; Khin Htoo; Teruhiko Kamei; Masaaki Higashitani; et al. (IEEE J. Solid State Circuits, 2009)

Balancing of Peak Currents Between Paralleled SiC MOSFETs by Drive-Source Resistors and Coupled Power-Source Inductors. - Yincan Mao; Zichen Miao; Chi-Ming Wang; Khai D. T. Ngo (IEEE Trans. Ind. Electron., 2017)

Detection of Cross-Turn-On and Selection of Off Drive Voltage for an SiC Power Module. - Zichen Miao; Yincan Mao; Chi-Ming Wang; Khai D. T. Ngo (IEEE Trans. Ind. Electron., 2017)