A 1.2 V 30 nm 3.2 Gb/s/pin 4 Gb DDR4 SDRAM With Dual-Error Detection and PVT-Tolerant Data-Fetch Scheme. - Kyomin Sohn; Taesik Na; Indal Song; Yong Shim; Wonil Bae; Sanghee Kang; Dongsu Lee; Hangyun Jung; Seok-Hun Hyun; Hanki Jeoung; Ki Won Lee; Jun-Seok Park; et al. (IEEE J. Solid State Circuits, 2013)

Design technologies for a 1.2V 2.4Gb/s/pin high capacity DDR4 SDRAM with TSVs. - Reum Oh; Byunghyun Lee; Sang-Woong Shin; Wonil Bae; Hundai Choi; Indal Song; Yun-Sang Lee; Jung-Hwan Choi; Chi-Wook Kim; Seong-Jin Jang; Joo-Sun Choi (VLSIC, 2014)

17.7 A digital DLL with hybrid DCC using 2-step duty error extraction and 180° phase aligner for 2.67Gb/S/pin 16Gb 4-H stack DDR4 SDRAM with TSVs. - Won-Joo Yun; Indal Song; Hanki Jeoung; Hundai Choi; Seok-Ho Lee; Jun-Bae Kim; Chi-Wook Kim; Jung-Hwan Choi; Seong-Jin Jang; Joo-Sun Choi (ISSCC, 2015)

18.2 A 1.2V 20nm 307GB/s HBM DRAM with at-speed wafer-level I/O test scheme and adaptive refresh considering temperature distribution. - Kyomin Sohn; Won-Joo Yun; Reum Oh; Chi-Sung Oh; Seong-Young Seo; Min-Sang Park; Dong-Hak Shin; Won-Chang Jung; Sang-Hoon Shin; Je-Min Ryu; Hye-Seung Yu; Jae-Hun Jung; et al. (ISSCC, 2016)