A 16.42 TOPS/mm2 Reverse Rotating Charge Sharing DRAM Compute-in-Memory Design in 28nm Process. - Tsung-Han Wu; Yu-Tse Shih; Hsin-Yung Fu; Chia Ling Ho; Wai-Chi Fang; Ke-Horng Chen; Kuo-Lin Zheng; Ying-Hsi Lin; Shian-Ru Lin; Tsung-Yen Tsai; Jui-Jen Wu; Meng-Fan Marvin Chang (ISCAS, 2025)