The impacts of high tensile stress CESL and geometry design on device performance and reliability for 90 nm SOI nMOSFETs. - Chieh-Ming Lai; Yean-Kuen Fang; Chien-Ting Lin; Chia-Wei Hsu; Wen-Kuan Yeh (Microelectron. Reliab., 2007)

Improvement of TDDB reliability, characteristics of HfO2 high-k/metal gate MOSFET device with oxygen post deposition annealing. - Chia-Wei Hsu; Yean-Kuen Fang; Wen-Kuan Yeh; Chun-Yu Chen; Yen-Ting Chiang; Feng-Renn Juang; Chien-Ting Lin; Chieh-Ming Lai (Microelectron. Reliab., 2010)