Comparative study of low-frequency noise in 0.18 μm and 0.35 μm gate-length nMOSFETs with gate area of 1.1 μm2. - Chih-Chan Hu; Yuan-Fong Chou Chau; Chee Ming Lim; Kuang-Hsiung Tan (Microelectron. Reliab., 2016)