Numerical Simulation of Static Noise Margin for a Six-Transistor Static Random Access Memory Cell with 32nm Fin-Typed Field Effect Transistors. - Yiming Li 005; Chih-Hong Hwang; Shao-Ming Yu (International Conference on Computational Science (4), 2007)

Large-scale atomistic approach to random-dopant-induced characteristic variability in nanoscale CMOS digital and high-frequency integrated circuits. - Yiming Li 005; Chih-Hong Hwang; Ta-Ching Yeh; Tien-Yeh Li (ICCAD, 2008)

Discrete-Dopant-Induced Timing Fluctuation and Suppression in Nanoscale CMOS Circuit. - Yiming Li 005; Chih-Hong Hwang; Tien-Yeh Li (IEEE Trans. Circuits Syst. II Express Briefs, 2009)

The impact of high-frequency characteristics induced by intrinsic parameter fluctuations in nano-MOSFET device and circuit. - Ming-Hung Han; Yiming Li 005; Chih-Hong Hwang (Microelectron. Reliab., 2010)

Statistical variability in FinFET devices with intrinsic parameter fluctuations. - Chih-Hong Hwang; Yiming Li 005; Ming-Hung Han (Microelectron. Reliab., 2010)

Device and circuit level suppression techniques for random-dopant-induced static noise margin fluctuation in 16-nm-gate SRAM cell. - Kuo-Fu Lee; Yiming Li 005; Tien-Yeh Li; Zhong-Cheng Su; Chin-Hong Hwang (Microelectron. Reliab., 2010)