Influence of polysilicon-gate depletion on the subthreshold behavior of submicron MOSFETs. - Juin J. Liou; R. Shireen; Adelmo Ortiz-Conde; Francisco J. García-Sánchez; Antonio Cerdeira; Xiaofang Gao; Xuecheng Zou; Ching-Sung Ho (Microelectron. Reliab., 2002)

An analytical threshold voltage model of NMOSFETs with hot-carrier induced interface charge effect. - Ching-Sung Ho; Kuo-Yin Huang; Ming Tang; Juin J. Liou (Microelectron. Reliab., 2005)

Indirect fitting procedure to separate the effects of mobility degradation and source-and-drain resistance in MOSFET parameter extraction. - Adelmo Ortiz-Conde; Francisco J. García-Sánchez; Juan Muci; Denise C. Lugo Muñoz; Álvaro D. Latorre Rey; Ching-Sung Ho; Juin J. Liou (Microelectron. Reliab., 2009)

Integration-based approach to evaluate the sub-threshold slope of MOSFETs. - Adelmo Ortiz-Conde; Francisco J. García-Sánchez; Juin J. Liou; Ching-Sung Ho (Microelectron. Reliab., 2010)

Revisiting MOSFET threshold voltage extraction methods. - Adelmo Ortiz-Conde; Francisco J. García-Sánchez; Juan Muci; Alberto Terán Barrios; Juin J. Liou; Ching-Sung Ho (Microelectron. Reliab., 2013)