Design Framework for Ferroelectric Gate Stack Engineering of Vertical NAND Structures for Efficient TLC and QLC Operation. - Dipjyoti Das; Lance Fernandes; Prasanna Venkatesan Ravindran; Taeyoung Song; Chinsung Park; Nashrah Afroze; Mengkun Tian; Hang Chen; Winston Chem; Kijoon Kim; Jongho Woo; Suhwan Lim; et al. (IMW, 2024)

Comprehensive Time Dependent Dielectric Breakdown (TDDB) Characterization of Ferroelectric Capacitors Under Bipolar Stress Conditions. - Priyankka Gundlapudi Ravikumar; Prasanna Venkatesan Ravindran; Khandker Akif Aabrar; Taeyoung Song; Sharadindu Gopal Kirtania; Dipjyoti Das; Chinsung Park; Nashrah Afroze; Mengkun Tian; Shimeng Yu; Ahmad Ehtesham Islam; Suman Datta; et al. (IRPS, 2024)

Understanding Correlation Between Memory Window Closure, Leakage and Read Delay Effects for FEFET Reliability Improvement: Role of IL and FE Traps. - Priyankka Gundlapudi Ravikumar; Andrea Padovani; Prasanna Venkatesan Ravindran; Chinsung Park; Nashrah Afroze; Mengkun Tian; Suman Datta; Shimeng Yu; Luca Larcher; Gaurav Thareja; Asif Khan (IRPS, 2025)

Enhanced Memory Performance in Ferroelectric NAND Applications: The Role of Tunnel Dielectric Position for Robust 10-Year Retention. - Prasanna Venkatesan Ravindran; Andrea Padovani; Lance Fernandes; Priyankka Gundlapudi Ravikumar; Chinsung Park; Huy Tran; Zekai Wang; Hari Jayasankar; Amrit Garlapati; Taeyoung Song; Hang Chen; Winston Chern; et al. (IRPS, 2025)

Modeling Dynamic Interplay Between Charge Traps and Polarization for Memory Window Enhancement in Gate Injection Layers. - Minji Shon; Chinsung Park; Prasanna Venkatesan Ravindran; Lance Fernandes; Kijoon Kim; Jongho Woo; Suhwan Lim; Kwangsoo Kim; Wanki Kim; Daewon Ha; Suman Datta; Asif Khan; et al. (IRPS, 2025)