W-band fully passivated AlN/GaN HEMT device with 56% power-added efficiency and 780 mW/mm output power density at 94 GHz. - F. Erdem Arkun; Dan Denninghoff; Haidang Tran; Ryan Tran; Nicholas C. Miller; Michael Elliott; Ryan Gilbert; Ivan Milosavljevic; Georges Siddiqi; Micha Fireman; Andrea L. Corrion; David Fanning; et al. (DRC, 2023)