Wide band gap semiconductor reliability : Status and trends. - Sylvain L. Delage; Christian Dua (Microelectron. Reliab., 2003)

Long-term reliability of Ti-Pt-Au metallization system for Schottky contact and first-level metallization on SiC MESFET. - A. Sozza; Christian Dua; A. Kerlain; C. Brylinski; Enrico Zanoni (Microelectron. Reliab., 2004)

Reliability Investigation of Gallium Nitride HEMT. - A. Sozza; Christian Dua; Erwan Morvan; Bertrand Grimbert; V. Hoel; Sylvain L. Delage; N. Chaturvedi; Richard Lossy; Joachim Würfl (Microelectron. Reliab., 2004)

A 3000 hours DC Life Test on AlGaN/GaN HEMT for RF and microwave applications. - A. Sozza; Christian Dua; Erwan Morvan; Bertrand Grimbert; Sylvain L. Delage (Microelectron. Reliab., 2005)

AlGaN/GaN HEMT Reliability Assessment by means of Low Frequency Noise Measurements. - A. Sozza; Arnaud Curutchet; Christian Dua; Nathalie Malbert; Nathalie Labat; André Touboul (Microelectron. Reliab., 2006)

Characterization and analysis of trap-related effects in AlGaN-GaN HEMTs. - Mustapha Faqir; Giovanni Verzellesi; Fausto Fantini; Francesca Danesin; Fabiana Rampazzo; Gaudenzio Meneghesso; Enrico Zanoni; Anna Cavallini; Antonio Castaldini; Nathalie Labat; André Touboul; Christian Dua (Microelectron. Reliab., 2007)

Characterisation and modelling of parasitic effects and failure mechanisms in AlGaN/GaN HEMTs. - Nathalie Malbert; Nathalie Labat; Arnaud Curutchet; C. Sury; V. Hoel; J.-C. de Jaeger; Nicolas Defrance; Y. Douvry; Christian Dua; Mourad Oualli; C. Bru-Chevallier; Jean-Marie Bluet; et al. (Microelectron. Reliab., 2009)

Degradation of TiAlNiAu as ohmic contact metal for GaN HEMTs. - Michele Piazza; Christian Dua; Mourad Oualli; Erwan Morvan; Dominique Carisetti; Frédéric Wyczisk (Microelectron. Reliab., 2009)

Comparison of the performances of an InAlN/GaN HEMT with a Mo/Au gate or a Ni/Pt/Au gate. - Isabella Rossetto; Fabiana Rampazzo; Riccardo Silvestri; Alberto Zanandrea; Christian Dua; Sylvain L. Delage; Mourad Oualli; Matteo Meneghini; Enrico Zanoni; Gaudenzio Meneghesso (Microelectron. Reliab., 2013)

Degradation of dc and pulsed characteristics of InAlN/GaN HEMTs under different proton fluences. - Isabella Rossetto; Fabiana Rampazzo; Simone Gerardin; Matteo Meneghini; Marta Bagatin; Alberto Zanandrea; Alessandro Paccagnella; Gaudenzio Meneghesso; Enrico Zanoni; Christian Dua; Marie-Antoinette di Forte-Poisson; Raphael Aubry; et al. (ESSDERC, 2014)

Influence of different carbon doping on the performance and reliability of InAlN/GaN HEMTs. - Isabella Rossetto; Fabiana Rampazzo; Matteo Meneghini; Marco Silvestri; Christian Dua; Piero Gamarra; Raphael Aubry; Marie-Antoinette di Forte-Poisson; O. Patard; Sylvain L. Delage; Gaudenzio Meneghesso; Enrico Zanoni (Microelectron. Reliab., 2014)

Stability and robustness of InAlGaN/GaN HEMT in short-term DC tests for different passivation schemes. - Mourad Oualli; Christian Dua; O. Patard; P. Altuntas; S. Piotrowicz; Piero Gamarra; Cedric Lacam; J.-C. Jacquet; L. Teisseire; D. Lancereau; Eric Chartier; C. Potier; et al. (Microelectron. Reliab., 2018)