Accelerated reliability testing of flash memory: Accuracy and issues on a 45nm NOR technology. - Marcello Calabrese; Carmine Miccoli; Christian Monzio Compagnoni; Luca Chiavarone; Silvia Beltrami; Andrea Parisi; Sebastiano Bartolone; Andrea L. Lacaita; Alessandro S. Spinelli; Angelo Visconti (ICICDT, 2013)

Data regeneration and disturb immunity of T-RAM cells. - Halid Mulaosmanovic; Christian Monzio Compagnoni; Niccolo Castellani; Gianpietro Carnevale; Domenico Ventrice; Paolo Fantini; Alessandro S. Spinelli; Andrea L. Lacaita; Augusto Benvenuti (ESSDERC, 2014)

Cycling-induced threshold-voltage instabilities in nanoscale NAND flash memories: Sensitivity to the array background pattern. - Giovanni M. Paolucci; Massimo Ernesto Bertuccio; Christian Monzio Compagnoni; Silvia Beltrami; Alessandro S. Spinelli; Andrea L. Lacaita; Angelo Visconti (ESSDERC, 2014)

Cycling pattern and read/bake conditions dependence of random telegraph noise in decananometer NAND flash arrays. - Carmine Miccoli; Giovanni M. Paolucci; Christian Monzio Compagnoni; Alessandro S. Spinelli; Akira Goda (IRPS, 2015)

Reliability of NAND Flash Memories: Planar Cells and Emerging Issues in 3D Devices. - Alessandro S. Spinelli; Christian Monzio Compagnoni; Andrea L. Lacaita (Comput., 2017)

Reviewing the Evolution of the NAND Flash Technology. - Christian Monzio Compagnoni; Akira Goda; Alessandro S. Spinelli; Peter Feeley; Andrea L. Lacaita; Angelo Visconti (Proc. IEEE, 2017)

Random Dopant Fluctuation and Random Telegraph Noise in Nanowire and Macaroni MOSFETs. - Alessandro S. Spinelli; Christian Monzio Compagnoni; Andrea L. Lacaita (ESSDERC, 2018)

Impact of Program Accuracy and Random Telegraph Noise on the Performance of a NOR Flash-based Neuromorphic Classifier. - Gerardo Malavena; Simone Petrò; Alessandro S. Spinelli; Christian Monzio Compagnoni (ESSDERC, 2019)

Current Transport in Polysilicon-channel GAA MOSFETs: A Modeling Perspective. - Aurelio Mannara; Alessandro S. Spinelli; Andrea L. Lacaita; Christian Monzio Compagnoni (ESSDERC, 2019)

Low-current, highly linear synaptic memory device based on MoS2 transistors for online training and inference. - Matteo Farronato; Margherita Melegari; Saverio Ricci; Shahin Hashemkhani; Christian Monzio Compagnoni; Daniele Ielmini (AICAS, 2022)

Modeling the Temperature Dependence of TDDB in Galvanic Isolators Based on Polymeric Dielectrics. - J. L. Mazzola; M. Greatti; C. Monzio Compagnoni; Alessandro S. Spinelli; V. Marano; M. Lauria; D. Paci; F. Speroni; Gerardo Malavena (ESSDERC, 2023)

Depassivation of Traps in the Polysilicon Channel of 3D NAND Flash Arrays: Impact on Cell High-Temperature Data Retention. - Mattia Giulianini; Gerardo Malavena; Luca Chiavarone; Alessandro S. Spinelli; Christian Monzio Compagnoni (IRPS, 2023)

Investigation of the Moisture- Driven Dynamics of Time- Dependent Dielectric Breakdown in Polymeric Dielectrics for Galvanic Isolators. - M. Greatti; J. L. Mazzola; C. Monzio Compagnoni; Alessandro S. Spinelli; D. Paci; F. Speroni; V. Marano; M. Lauria; Gerardo Malavena (IRPS, 2024)

Roadmap to Neuromorphic Computing with Emerging Technologies. - Adnan Mehonic; Daniele Ielmini; Kaushik Roy 001; Onur Mutlu; Shahar Kvatinsky; Teresa Serrano-Gotarredona; Bernabé Linares-Barranco; Sabina Spiga; Sergey Savelev; Alexander G. Balanov; Nitin Chawla; Giuseppe Desoli; et al. (CoRR, 2024)

Current Dynamics during Bipolar TDDB in Galvanic Isolators based on Polymeric Dielectrics. - M. Greatti; J. L. Mazzola; P. Vogler; C. Monzio Compagnoni; Alessandro S. Spinelli; D. Paci; F. Speroni; D. Asnaghi; M. Salina; F. Guzzi; M. Lauria; V. Marano; et al. (IRPS, 2025)

Cryogenic Investigation of Vertical Charge Loss in 3D NAND Flash Memories. - D. G. Refaldi; Gerardo Malavena; Luca Chiavarone; N. Gagliazzi; Alessandro S. Spinelli; C. Monzio Compagnoni (IRPS, 2025)